vishay general semiconductor kbp005m thru kbp10m, 3n246 thru 3n252 document number 88531 10-nov-06 www.vishay.com 1 glass passivated single-phase bridge rectifier features ? ul recognition file number e54214 ? ideal for printed circuit board ? high surge current capability ? high case dielectric strength ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for switching power supply, home appliances, office equipment, and telecommunication applications. mechanical data case: kbpm epoxy meets ul 94v-0 flammability rating terminals: silver plated lead s, solderable per j-std-002b and jesd22-b102d e4 suffix for commercial grade polarity: as marked on body case style kbpm ~ ~ ~ ~ major ratings and characteristics i f(av) 1.5 a v rrm 50 v to 1000 v i fsm 60 a i r 5 a v f 1.0 v t j max. 150 c * jedec registered values maximum ratings (t a = 25 c unless otherwise noted) parameter symbol kbp 005m kbp 01m kbp 02m kbp 04m kbp 06m kbp 08m kbp 10m unit 3n246 3n247 3n248 3n249 3n250 3n251 3n252 * maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v * maximum rms voltage v rms 35 70 140 280 420 560 700 v * maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v max. average forward output rectified current at t a = 40 c i f(av) 1.5 a * peak forward surge current single half sine-wave t a = 25 c t j = 150 c i fsm 60 40 a rating for fusing (t < 8.3 ms) i 2 t 10 a 2 sec * operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com 2 document number 88531 10-nov-06 vishay general semiconductor kbp005m thru kbp10m, 3n246 thru 3n252 * jedec registered values note: (1) thermal resistance from junction to am bient and from junction to lead mounted on p.c.b. with, 0.47 x 0.47" (12 x 12 mm) cop per pads ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol kbp 005m kbp 01m kbp 02m kbp 04m kbp 06m kbp 08m kbp 10m unit 3n246 3n247 3n248 3n249 3n250 3n251 3n252 * maximum instantaneous forward voltage drop per diode at 1.0 a at 1.57 a v f 1.0 1.3 v * maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c t a = 125 c i r 5.0 500 a typical junction capacitance per diode at 4.0 v, 1 mhz c j 15 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol kbp 005m kbp 01m kbp 02m kbp 04m kbp 06m kbp 08m kbp 10m unit 3n246 3n247 3n248 3n249 3n250 3n251 3n252 typical thermal resistance (1) r ja r jl 40 13 c/w ordering information preferred p/n unit weight (g) preferred package code base quantity delivery mode kbp06m-e4/45 1.895 45 30 tube kbp06m-e4/51 1.895 51 600 anti-static pvc tray 3n250-e4/45 1.895 45 30 tube 3n250-e4/51 1.895 51 600 anti-static pvc tray figure 1. derating curve output rectified current 0 20 40 60 8 0 100 120 140 150 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 capaciti v e load ipk/i a v = 5.0 ipk/i a v =10 ipk/i a v =20 (per leg) bridge o u tp u t f u ll w a v e rectified c u rrent a v erage (a) am b ient temperat u re (c) p. c . b . m o u nted on 0.47 x 0.47" (12 x 12 mm) copper pads 60 hz resisti v e or ind u cti v e load figure 2. maximum non-repetitive peak forward surge current per diode 0 10 1 100 10 20 30 40 50 60 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 1.0 cycle single half sine- w a v e t j = 150 c t a = 25 c
document number 88531 10-nov-06 www.vishay.com 3 kbp005m thru kbp10m, 3n246 thru 3n252 vishay general semiconductor package outline dimensions in inches (millimeters) figure 3. typical forward characteristics per diode figure 4. typical reverse leak age characteristics per diode 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 20 t j =2 5 c p u lse w idt h= 300 s 1 % d u ty cycle instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0 0.01 0.1 1 10 60 8 0 100 20 40 percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) t j = 100 c t j = 125 c t j = 25 c figure 5. typical juncti on capacitance per diode 1 0.1 10 100 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p re v erse v oltage ( v ) j u nction capacitance (pf) 0.125 x 45 o (3.2) 0.600 (15.24) 0.560 (14.22) 0.034 (0. 8 6) 0.02 8 (0.76) 0.105 (2.67) 0.0 8 5 (2.16) 0.160 (4.1) 0.140 (3.6) 0.060 (1.52) polarity sho w n on front side of case: positi v e lead b y b e v eled corner 0.460 (11.6 8 ) 0.50 (12.7) min. 0.420 (10.67) 0.500 (12.70) 0.460 (11.6 8 ) 0.60 (15.2) mi n . dia. 0.200 (5.0 8 ) 0.1 8 0 (4.57) case style kbpm
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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